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DDR3 SDRAM DDR3 continues the trend, doubling the minimum read or write unit to 8 consecutive words. This allows another doubling of bandwidth and external bus rate without having to change the clock rate of internal operations, just the width
JSC Semiconductor has succeeded in successively developing new products such as mobile ram (CellularRam) and LP DDR SDRAM since recognition of its technical strength.The following are the product parameters of Mobile SDRAM：128Mbit~512Mbit Density；1.7~1.95V Voltage；200MHz Max Frequancy；90B (8x13x1.0mm),54B (8x8x1.2mm),60B (8x9x1.0mm) Package Type.
Part Number
Capacity
Organization
Voltage
Speed(MHz)
Temperature
Package
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JSR364G168NHR-LAI
4Gbit
256Mb x 16
1.35V
DDR3-2133
Industrial
96FBGA
Contact Us
JSR364G168NHR-LA
4Gbit
256Mb x 16
1.35V
DDR3-2133
Consumer
96FBGA
Contact Us
JSR364G168NHR-LI
4Gbit
256Mb x 16
1.35V
DDR3-1866
Industrial
96FBGA
Contact Us
JSR364G168NHR-L
4Gbit
256Mb x 16
1.35V
DDR3-1866
Consumer
96FBGA
Contact Us
JSR364G088NHW-LAI
4Gbit
512Mb x 8
1.35V
DDR3-2133
Industrial
78FBGA
Contact Us
JSR364G088NHW-LA
4Gbit
512Mb x 8
1.35V
DDR3-2133
Consumer
78FBGA
Contact Us
JSR364G088NHW-LI
4Gbit
512Mb x 8
1.35V
DDR3-1866
Industrial
78FBGA
Contact Us
JSR364G088NHW-L
4Gbit
512Mb x 8
1.35V
DDR3-1866
Consumer
78FBGA
Contact Us
JSR364G168NHR-AI
4Gbit
256M x 16
1.5V
DDR3-2133
Industrial
96FBGA
Contact Us
JSR364G168NHR-A
4Gbit
256M x 16
1.5V
DDR3-2133
Consumer
96FBGA
Contact Us
JSR364G168NHR-I
4Gbit
256M x 16
1.5V
DDR3-1866
Industrial
96FBGA
Contact Us
JSR364G168NHR
4Gbit
256M x 16
1.5V
DDR3-1866
Consumer
96FBGA
Contact Us
JSR364G088NHW-AI
4Gbit
512M x 8
1.5V
DDR3-2133
Industrial
78FBGA
Contact Us
JSR364G088NHW-A
4Gbit
512M x 8
1.5V
DDR3-2133
Consumer
78FBGA
Contact Us
JSR364G088NHW-I
4Gbit
512M x 8
1.5V
DDR3-1866
Industrial
78FBGA
Contact Us
JSR364G088NHW
4Gbit
512M x 8
1.5V
DDR3-1866
Consumer
78FBGA
Contact Us
JSR362G168NHR-LAI
2Gbit
128M x 16
1.35V
DDR3-2133
Industrial
96FBGA
Contact Us
JSR362G168NHR-LA
2Gbit
128M x 16
1.35V
DDR3-2133
Consumer
96FBGA
Contact Us
JSR362G168NHR-LI
2Gbit
128M x 16
1.35V
DDR3-1866
Industrial
96FBGA
Contact Us
JSR362G168NHR-L
2Gbit
128M x 16
1.35V
DDR3-1866
Consumer
96FBGA
Contact Us
JSR362G088NHW-LAI
2Gbit
256Mb x8
1.35V
DDR3-2133
Industrial
78FBGA
Contact Us
JSR362G088NHW-LA
2Gbit
256Mb x8
1.35V
DDR3-2133
Consumer
78FBGA
Contact Us
JSR362G088NHW-LI
2Gbit
256Mb x8
1.35V
DDR3-1866
Industrial
78FBGA
Contact Us
JSR362G088NHW-L
2Gbit
256Mb x8
1.35V
DDR3-1866
Consumer
78FBGA
Contact Us
JSR362G168NHR-AI
2Gbit
128M x 16
1.5V
DDR3-2133
Industrial
96FBGA
Contact Us
JSR362G168NHR-A
2Gbit
128M x 16
1.5V
DDR3-2133
Consumer
96FBGA
Contact Us
JSR362G168NHR-I
2Gbit
128M x 16
1.5V
DDR3-1866
Industrial
96FBGA
Contact Us
JSR362G168NHR
2Gbit
128M x 16
1.5V
DDR3-1866
Consumer
96FBGA
Contact Us
JSR362G088NHW-AI
2Gbit
256M x 8
1.5V
DDR3-2133
Industrial
78FBGA
Contact Us
JSR362G088NHW-A
2Gbit
256M x 8
1.5V
DDR3-2133
Consumer
78FBGA
Contact Us
JSR362G088NHW-I
2Gbit
256M x 8
1.5V
DDR3-1866
Industrial
78FBGA
Contact Us
JSR362G088NHW
2Gbit
256M x 8
1.5V
DDR3-1866
Consumer
78FBGA
Contact Us
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<![CDATA[<rp id="05aew"><video id="05aew"></video></rp>]]> <![CDATA[<i id="05aew"><del id="05aew"></del></i>]]> <![CDATA[<ul id="05aew"><kbd id="05aew"></kbd></ul>]]>
<![CDATA[<rp id="05aew"><video id="05aew"></video></rp>]]>
JSC Semiconductor has succeeded in successively developing new products such as mobile ram (CellularRam) and LP DDR SDRAM since recognition of its technical strength.The following are the product parameters of Mobile SDRAM：128Mbit~512Mbit Density；1.7~1.95V Voltage；200MHz Max Frequancy；90B (8x13x1.0mm),54B (8x8x1.2mm),60B (8x9x1.0mm) Package Type.
